The subthreshold slope, as one of the key issues of deep-submicrometer devices, is defined as  (15) where V t is the threshold voltage, V off is the off voltage of the device, I vt is the drain eFT-508 current at threshold, and I off is the current at which the device is off. In other words, the subthreshold slope delineates the inverse slope of the log (I D) versus V GS plotted graph as illustrated in Figure 10. Figure 10 I D (μA)- V GS (V) characteristic of TGN SB FET at different values of V DS . Average subthreshold swing is a fundamental parameter that
influences the performance of the device as a switch. According to Figure 10, the subthreshold slope for (l = 100 nm) is obtained as shown in Table 1. Table 1 Subthreshold selleck screening library slope of TGN SB FET at different PF-6463922 molecular weight values of V DS V DS (mV) 1 1.1 1.2 1.3 1.4 1.5 Subthreshold slope
(mV/decade) 59.5238 54.1419 49.6032 45.8085 42.5134 39.2542 Based on data from , for the effective channel lengths down to 100 nm, the calculated and simulated subthreshold slope values are near to the classical value of approximately 60 mV/decade. The subthreshold slope can be enhanced by decreasing the value of the buried oxide capacitance C BOX or by increasing the value of the gate oxide capacitance C GOX. Based on the simulated results, it can be concluded that when the channel material is replaced by TGN, the subthreshold swing Forskolin cell line improves further. The comparison study between the
presented model with data from [62, 64] showed that due to the quantum confinement effect [39, 43], the value of the subthreshold slope in the case of TGN SB FET is less than those of DG metal oxide semiconductor and vertical silicon-on-nothing FETs [62, 64] for some values of drain-source voltage. A nanoelectronic device characterized by a steep subthreshold slope displays a faster transient between on-off states. A small value of S denotes a small change in the input bias which can modulate the output current and thus leads to less power consumption. In other words, a transistor can be used as a high-speed switch when the value of S is small. As a result, the proposed model can be applied as a useful tool to optimize the TGN SB FET-based device performance. It showed that the shortening of the top gate may lead to a considerable modification of the TGN SB FET current–voltage properties. In fact, it also paves a path for future design of the TGN SB devices. Conclusions TGN with different stacking arrangements is used as metal and semiconductor contacts in a Schottky transistor junction. The ABA-stacked TGN in the presence of an external electric field is also considered. Based on this configuration, an analytical model of junction current–voltage characteristic of TGN SB FET is presented.